New nanoscale 3D transistors are introduced

Transistors are semiconductor devices that have multiple functions such as switching, voltage regulation, and signal modulation, and can be used for various digital and analog functions. With the continuous development of the global information industry, semiconductors, as the fundamental and critical components of information technology products, and the types of transistors are becoming increasingly diverse to meet the growing industry demand.

Recently, a team from the Massachusetts Institute of Technology in the United States successfully developed a new nanoscale 3D transistor using ultra-thin semiconductor materials. This is the smallest known 3D transistor to date, with performance and functionality comparable to or even surpassing existing silicon-based transistors, which will open up new avenues for the development of high-performance energy-saving electronic products. The relevant paper was published in the journal Nature Electronics.

In the past, silicon-based transistors were limited by the power consumption of electronic devices, which prevented them from operating below a certain voltage. This undoubtedly limited their ability to further improve performance and expand their applicability.

To address the above issues, the research team has developed a new type of 3D transistor using ultra-thin semiconductor materials composed of gallium antimonide and indium arsenide. The performance of this transistor is comparable to advanced silicon transistors, and it can operate efficiently at voltages much lower than traditional transistors.

It is reported that the team has also introduced the principle of quantum tunneling into the new transistor architecture. In quantum tunneling, electrons can pass through energy barriers instead of crossing them, making it easier for transistors to be turned on or off. To further reduce the size of the new transistor, they created a vertical nanowire heterostructure with a diameter of only 6 nanometers.

The experimental results show that the new transistor can switch states more quickly and efficiently, and its performance is improved by 20 times compared to similar tunneling transistors. It fully utilizes the properties of quantum mechanics, achieving both low voltage operation and high performance within a few square nanometers. Due to the small size of the transistor, more of it can be packaged on computer chips, laying a solid foundation for the development of more efficient, energy-saving, and powerful electronic products.

The launch of this new nanoscale 3D transistor is not only a breakthrough innovation in traditional transistor technology, but also a profound layout for the future development of electronic devices. In the future, with the continuous maturity and improvement of technology, it is expected to be widely applied in various electronic products, ushering in a more intelligent and efficient era.

Source: Science and Technology Daily