Hall Effect Testing of Semiconductor Materials

Hall Effect Testing of Semiconductor Materials

The Hall effect of semiconductor materials is an important means to characterize and analyze semiconductor materials, and the conductivity type of materials can be judged according to the sign of the Hall coefficient. The Hall effect is essentially the deflection of a moving charged particle in a magnetic field by the Lorentz force. When a charged particle (electron or hole) is confined in a solid material, this deflection results in a movement perpendicular to the current and magnetic field. The accumulation of positive and negative charges in the direction of the formation of an additional transverse electric field.

According to the Hall coefficient and its relationship with temperature, the carrier concentration can be calculated, as well as the relationship between carrier concentration and temperature, so that the forbidden band width and impurity ionization energy of the material can be determined; The combined measurement can determine the mobility of carriers, and the longitudinal carrier concentration distribution can be measured by the differential Hall effect method; the impurity compensation degree can be determined by measuring the low temperature Hall effect. Different from other tests, the Hall parameter test is characterized by many test points, complicated connections, large amount of calculation, and additional temperature and magnetic field environment.